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中文摘要：
应用溶胶-凝胶法在Pt／Ti／SiO2／Si（001）基片上制备了BiFeO3薄膜，构架了Pt／BiFeO3／Pt电容器。采用X射线衍射仪和铁电测试仪研究了Pt／BiFeO3／Pt电容器的结构和物理性能。实验发现BiFeO3最佳的结晶温度为600℃，X射线衍射图谱显示BiFeO3薄膜结晶状况良好，原子力显微镜照片显示BiFeO3表面颗粒均匀。PL／BiFeO3／Pt电容器具有良好的电学性能，在驱动电压为5V的情况下，Pt／BiFeO3／Pt电容器的电滞回线具有良好的对称性，漏电流密度小于10^-4A／cm^2，研究发现BiFeO3薄膜log（J）／log（E）关系满足空间电荷限制电流传导机制。
英文摘要：
Pt/BiFeO3/Pt ferroelectric capacitors have been fabricated on Pt/Ti/SiOz/Si substrates via a sol-gel method. X-ray diffraction technique and a ferroelectric tester were used to characterize the structural and physical properties of Pt/BiFeOa/Pt capacitors. It is found that the optimized temperature of BiFeO3 film is 600 ℃. The X-ray diffraction （XRD） measurement indicates that BiFeO3 film is well- crystalized. The atomic force microscopy （AFM） image indicates BiFeO3 film is dense with uniform grains. Hysteresis loop of Pt/BiFeO3/Pt capacitor, measured at 5 V, is very symmetric. Leakage current density of Pt/BiFeO3/Pt capacitor at 5 V is less than 10^-4A/cm^2, the relation of log（J） vs log（E） curve agrees well with the theory of space-charge-limited current.
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