在外延SrTiO3(STO)作为缓冲层的Si基片上,应用溶胶-凝胶法(sol-gel)和磁控溅射法,在5.50℃温度下制备了外延的La0.5Sr0.5CdO3/Pb(Zr0.2Ti0.8)O3/La0.5Sr0.5CoO3(LSCO/PZT/LSCO)异质结。X射线衍射结果表明,LSCO/PZT/LSCO异质结是c向外延生长的。当外加电压为60V时,LSCO/PZT/LSCO铁电电容器的剩余极化强度为.50.3μC/cm^2.,当电压为30V时,铁电电容器有效极化强度为80μC/cm^2.。其它电学性能表明。PZT铁电电容器具有较高的电阻率和脉冲宽度对极化强度的影响较弱。
Sol-Gel La-Sr-Co-O/Pb(Zr0.2Ti0.8)O3/La-Sr-Co-O(LSCO/PZT/LSCO) heterogeneous films have been successfully grown by a combination of sol-gel and magnetron sputtering at 550℃ on Si (111 ) substrate coated with an SrTiO3 (STO) buffer layer. The hereto-junctions of the films were fabricated.X-ray diffraction (XRD) study of its microstructures shows that the highly preferred growth orientation of the polycrystalline films is c-axis. Biased at 60 V, the remnant polarization of the LSCO/PZT/LSCO ferroelectric capacitor is 50.3μC/cm^2. ; whereas at 30V, its effective polarization is 80μC/cm^2. Moreover, the capacitor shows several strengths, including fairly high resistivity and weak influence of pulse width on polarization.