中文摘要：

应用溶胶-凝胶法成功地在以SrTiO3（STO）为模板／阻挡层Si（001）基片上制备了La-Sr-Co-O／Pb（Zr0．5Ti0．5）O3（PZT）／La-Sr-Co-O／STO／Si异质结，PZT的厚度为0．8μm。研究了异质结的结构和性能。实验发现，PZT结晶良好、具有（001）高度择优取向以及较高的极化强度和较小的极化强度对脉冲宽度的依赖性；当外加电压为50V时，电阻率仍〉10^8Ω·cm。

英文摘要：

La-Sr-Co-O/Pb（Ti0.5Ti0.5）O3（PZT）/La-Sr-Co-O/STO/Si heterostructure has been successfully fabricated on SrTiO3（STO）/Si（001） substrate using sol-gel method, in which the thickness of PZT film is 0.8μm. The structural and physical properties of La-Sr-Co-O/PZT/La-Sr-Co-O heterostructure are studied, and found that PZT capacitors, having both higher polarization and less pulse width dependence, is highly （001） oriented and well crystallinized. At 50V, the resistivity of PZT film is higher than 10^8Ω·cm which is favorable for future applications.