中文摘要：

以非晶Ni—Al薄膜作为Cu互连的阻挡层材料，采用射频磁控溅射法构架了Cu／Ni-Al／Si的异质结。利用原子力显微镜、X射线衍射仪和四探针测试仪研究了不同温度下高真空退火样品的表面形貌、微观结构与输运性质。实验发现非晶Ni—Al薄膜在高达750℃的退火温度仍能保持非晶结构，各膜层之间没有明显的反应和互扩散存在，表明了非晶Ni—Al薄膜具有良好的阻挡效果，可以用作Cu互连的阻挡层材料。

英文摘要：

The Cu/Ni-Al/Si heterostrueture is prepared using rt magnetron sputtering, m which amorphous Ni- AI film is studied as the diffusion barrier layer. The surface morphology, microstructure and transport properties of the samples are investigated by atomic force microscope （AFM）, X-ray diffraction measurement （XRD）, and four probe methods. It is found that the Ni-Al film keeps amorphous and no obvious reactions or interdiffusion occur after high temperature process up to 750℃, indicating the amorphous Ni-Al layer has good barrier properties and can be used as the barrier layer for Cu metallization.