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应变SGOI PMOSFET的阈值电压解析模型
  • 期刊名称：物理学报
  • 时间：2010
  • 页码：8877-8882
  • 相关项目：纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
作者： 刘红侠|尹湘坤|刘冰洁|郝跃|
同期刊论文项目
纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
期刊论文 74 会议论文 27
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