位置：成果数据库 > 期刊 > 期刊详情页
Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric U
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2012
  • 页码：1661-1667
  • 相关项目：纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
作者： G. F. Jiao|C. J. Yao|Y. Xuan, et al.,|
同期刊论文项目
纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
期刊论文 74 会议论文 27
同项目期刊论文
场板抑制GaN高电子迁移率晶体管电流崩塌的机理研究
Characterization Analysis of UDSM LVTSCR Under TLP Stress
Effect of Interface-Traps and Oxide-Charge on Drain Current Degradation in Tunneling Field-Effect Tr
Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing t
Two-Dimensional Analytical Model for Fully Depleted Dual-Material Gate Strained Silicon-on-Insulator
Impact of Gate Dielectric Curvature on the Nano-Wire MOSFETs Performance and Scaling
Two ESD Detection Circuits for 3×VDD Tolerant I/O Buffer in Low-voltages CMOS Processes with L
Reliability of High Mobility InGaAs Channel n-MOSFETs under BTI Stress
Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate MOS
Electrical characteristics of SiGe-on insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET
Numerical analysis of the self-heating effect in SGOI with a double step buried oxide
A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate str
Quasi-Ballistic Transport and Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs
Logarithm Cofactor Difference Extrema Method of MOSFET's Post-Breakdown Current and Application
Analytic Yet Continuous Surface Potential versus Voltage Equation of Intrinsic Nanoscale Surrounding
Application of Multi-frequency Test and Neural Network to Fault Diagnosis in Analog Circuits
Compact Modeling of Parameter Variations of Nanoscale CMOS due to Random Dopant Fluctuation
A Nonlinear Poisson-Schrodinger Solver Under Cylindrical Coordinate for Quantum Effect in Nanowire M
应变SGOI PMOSFET的阈值电压解析模型
应变Si1-xGex n型金属氧化物半导体场效应晶体管反型层中的电子迁移率模型
Field-Based 3D Capacitance Modeling for sub-45-nm On-chip Interconne
总计量辐照条件下部分耗尽SOINMOS器件的三种kink效应
Temperature Dependence of the Interface State Distribution due to Hot Carrier Effect in FinFET Devic
Diode parameter extraction by a linear cofactor difference operation method
Defects Detection of IC Wafer Based on Spectral Subtraction
Defect Detection of IC Wafer Based on Two-dimension Wavelet Transform
Characteristics Analysis and Optimization Design of a New ESD Power Clamp Circuit
A comparative study of self-heating effect of nMOSFETs fabricated on SGOI and SGSOAN substrates
The study on two-dimensional analytical model for gate stack fully depleted strained Si on SGOI MOSF
Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOS
Gate Tunneling in Nano-Wire MOSFETs
Improvement in Reliability of Tunneling Field Effect Transistor with PNIN Structure
Forward gated-diode method for parameter extraction of MOSFETs
Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity
An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold
A Novel High Performance ESD Power Clamp Circuit with Small Area
A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped LDD st
The influence and explanation of FIBL on sub-100 nm MOSFETs with high-k gate dielectric
Parameter Extraction of Nano-Scale MOSFET by Forward Gated-Diode Method
Neural Network Method to Model Nanoscale MOSFET Characteristics
基于可测性分析的模拟电路多频测试矢量生成
Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors
Diagram Representations of Charge Pumping Processes in the CMOS Transistors
A novel ESD power supply clamp circuit with double pull-down paths
A compact diode array model for phase change memory application
Polynunomial Effective Channel Mobility Based Above-Threshold Current Model for Undoped Polycrystall
高k栅介质应变硅Si SOI MOSFET的阈值电压模型
Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity
Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs
Numerical study on the effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM perf
量子阱Si/SiGe/Si p型场效应管阈值电压和沟道空穴面密度模型
A pinned photo diode analytic model enabling opt-electronic circuit simulation
新型SOANN埋层SOI器件的自加热效应研究
应变Si/Si1-xGex n型金属氧化物半导体场效应晶体管反型层中的电子迁移率模型
应变绝缘层上硅锗p型金属氧化物场效应晶体管的阈值电压解析模型
低剂量率^60Co γ射线辐照下SOI MOS器件的退化机理
异质栅全耗尽应变硅金属氧化物半导体模型化研究
Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs
总剂量辐照条件下部分耗尽半导体氧化物绝缘层N沟道金属氧化物半导体器件的三种kink效应
前驱体和退火温度对Nd2O3薄膜组分影响的定量研究
三维H形栅SOINMOS器件总剂量条件下的单粒子效应
非对称Halo异质栅应变Si SOI MOSFET的二维解析模型
NMOS器件中单粒子瞬态电流收集机制的二维数值分析
偏置条件对SOINMOS器件总剂量辐照效应的影响
栅长对PDSOINMOS器件总剂量辐照效应影响的实验研究
考虑量子效应的高k栅介质SOIMOSFET特性研究
Diagram representations of charge pumping processes in CMOS transistors
Clear correspondence between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F-N stress tests