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中文摘要：
分析研究了应变绝缘层上硅锗p型金属氧化物场效应晶体管（SGOI pMOSFET）的阈值电压模型,修正了应变作用下SGOI pMOSFET的能带模型,并提取了主要的物理参量.这些典型的参量包括禁带宽度、电子亲和能、内建势等.给出了应变硅SGOI pMOSFET内部电势分布的二维泊松方程,通过边界条件求解方程,得出了准确的阈值电压模型,并且验证了该模型的正确性.
英文摘要：
This paper investigates the threshold voltage analytic model of strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor（SGOI pMOSFET）,revises the energy band model of strained-silicon,and extracts the main physical parameters of strained-SiGe devices.These parameters include the energy gap,electron affinity,build-up potential,etc.In this paper,the two-dimensional Possions equation of build-in potential in strained silicon SGOI pMOSFET is also presented.By using the boundary conditions to solve these equations,an accurate threshold voltage analytic model is proposed and its validity is verified.
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