欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
为了进一步提高小尺寸金属氧化物半导体（MOSFET）的性能,在应变硅器件的基础上,提出了一种新型的异质栅MOSFEET器件结构.通过求解二维Poisson方程,结合应变硅技术的物理原理,建立了表面势、表面电场以及阈值电压的物理模型,研究了栅金属长度、功函数以及双轴应变对其的影响.通过仿真软件ISE TCAD进行模拟仿真,模型计算与数值模拟的结果基本符合.研究表明：与传统器件相比,本文提出的异质栅应变硅新器件结构的载流子输运效率进一步提高,可以很好地抑制小尺寸器件的短沟道效应、漏极感应势垒降低效应和热载流子效应,使器件性能得到了很大的提升.
英文摘要：
In this paper,we propose a new device structure called HMG SSDOI（hetero-materiel gate strained Si directly on insulator）,which combines the advantages of strained-silicon and hetero-material gate technology.By solving 2D Poisson＇s equation,we present models of the surface potential,surface electric field and threshold voltage for the new structure.These models take into account the effects of the gate length,the work function and the energy band.ISE TCAD is also used to simulate the performance of new device structure. The comparison results of model calculation and mathematic simulation show that the new structure of HMG SSDOI can enhance the carrier transport efficiency and suppress short channel effect,drain induction barrier lower and hot carrier effect,which improves device performance greatly.
同期刊论文项目
同项目期刊论文
Effect of Interface-Traps and Oxide-Charge on Drain Current Degradation in Tunneling Field-Effect Tr
Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing t
Two-Dimensional Analytical Model for Fully Depleted Dual-Material Gate Strained Silicon-on-Insulator
Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate MOS
Electrical characteristics of SiGe-on insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET
A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate str
Analytic Yet Continuous Surface Potential versus Voltage Equation of Intrinsic Nanoscale Surrounding
A Nonlinear Poisson-Schrodinger Solver Under Cylindrical Coordinate for Quantum Effect in Nanowire M
Temperature Dependence of the Interface State Distribution due to Hot Carrier Effect in FinFET Devic
The study on two-dimensional analytical model for gate stack fully depleted strained Si on SGOI MOSF
Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOS
An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold
A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped LDD st
Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric U
Polynunomial Effective Channel Mobility Based Above-Threshold Current Model for Undoped Polycrystall
Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs
Numerical study on the effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM perf
Fabrication and Characteristics of Alinn/Aln/Gan Mos-hemts with Ultra-thin Atomic Layer Deposited Al
Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET
Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-
The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-g
Valence band Structure and Density of States Effective mass Model of Biaxial Tensile Strained Silico
期刊信息
位置：