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Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs
  • 期刊名称：Chinese Physics B
  • 时间：2011
  • 页码：017301-
  • 相关项目：纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
作者： Hongxia Liu|Jin Li|
同期刊论文项目
纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
期刊论文 74 会议论文 27
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