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中文摘要：
本文提出了一个新型的S01埋层结构SOANN（siliconon aluminum nitride with nothing），用AIN代替传统的Si02材料，并在S01埋氧化层中引入空洞散热通道．分析了新结构S01器件的自加热效应．研究结果表明：用AIN做为S01埋氧化层的材料，降低了晶格温度，有效抑制了自加热效应．埋氧化层中的空洞，可以进一步提供散热通道，使埋氧化层的介电常数下降，减小了电力线从漏端通过埋氧到源端的耦合，有效抑制了漏致势垒降低DIBL（drain Induced barrier lowering）效应．因此，本文提出的新型SOANN结构可以提高S01器件的整体性能，具有优良的可靠性．
英文摘要：
In this paper, we present a new silicon-on-insulator （SO1） buried oxide structure, i.e., silicon on aluminum nitride with nothing （SOANN）. In the novel structure, the traditional SiO2 is replaced by A1N, and gas cavity is constructed in the SOI buried oxide. The self-heating effect of novel SOI device is analyzed. The result shows that using A1N as a buried oxide, the temperature of lattice and the effectively restrained self-heating effect can decrease. In addition, the gas cavity in the buried oxide can provide a heat emission passage and reduce the dielectric constant. The coupling effect of electric field lines from drain to source is weakened, and the drain induced barrier lowering effects is effectively restrained. Therefore, this new SOANN structure can improve the performance of the SOI devices, and provide high reliability as well.
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