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纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
  • 项目名称：纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
  • 项目类别：重点项目
  • 批准号：60936005
  • 申请代码：F040502
  • 项目来源：国家自然科学基金
  • 研究期限：2010-01-01-2013-12-31
  • 项目负责人：黄大鸣
  • 负责人职称：教授
  • 依托单位：复旦大学
  • 批准年度：2009
中文摘要：

当今CMOS器件的特征尺寸已经进入纳米尺度。与微米、亚微米器件比较，纳米CMOS器件中材料、结构和工艺都在发生新的变化。二氧化硅/多晶栅已被超薄硅氧氮/多晶栅或高k介质/金属栅替代；部分无应变的(100)硅衬底已经或者将被应变的或者(110)晶向的硅替代；甚至硅衬底和单栅结构最终将分别被SOI材料和多栅器件替代。纳米CMOS器件在材料、结构和工艺上的变化，带来了日益严重的可靠性问题，包括阈值电压的不稳定性，沟道导电能力在电应力下的退化、以及栅介质的击穿等。另外，尺寸的缩小使得一些传统的可靠性测试方法无法有效用于纳米器件，从而制约了器件退化机理的了解和退化模型的建立。本项目针对纳米CMOS器件中面临的关键可靠性问题，发展新的可靠性测试和分析方法，了解器件特性退化和失效的物理机制，建立器件退化和寿命预测模型，为集成电路产业的发展，提高纳米CMOS器件的可靠性，提供科学的方法、模型、数据和建议。

中文主题词： 可靠性；MOSFET；表征技术；退化机理；退化模型
英文摘要：

Reliability；MOSFET；Characterization Technique；Degradation Mechanism；Degradation Model

英文主题词： Reliability；MOSFET；Characterization Technique；Degradation Mechanism；Degradation Model
结论摘要：

（1）项目组改进，发展或建立了纳米CMOS器件的可靠性表征技术，包括快速IV测试，准实时电荷泵浦（CP）测试和低频噪声谱（1/f谱和随机电报噪声RTN）测试方法。（2）应用传统和上述可靠性表征技术，深入研究了传统平面硅pMOSFET的负偏压温度不稳定性（NBTI），改进了经典的反应扩散模型，考虑栅电极多晶硅中氢的反向扩散效应，提出了反应限制扩散模型。针对FinFET的热载流子注入（HCI），提出了应力下界面态分布的经验模型和电流退化的集约模型。（3）在国际上率先开展了隧穿场效应晶体管（TFET）的可靠性研究，通过实验和仿真，提出了nTFET的正偏压温度不稳定性（PBTI）和热载流子注入（HCI）的退化机理，发现影响TFET可靠性的主要区域集中在隧穿结附近。（4）系统地研究了InGaAs沟道nMOSFET的可靠性，提出了这一器件的PBTI退化机理以及相应的缺陷产生模型，提出InGaAs/高k栅介质界面附近的缺陷，是影响这一器件可靠性的关键因素。（5）根据CMOS器件的BTI和HCI退化特性，建立了环形振荡器的频率退化模型，用于65纳米工艺，区分了BTI和HCI对电路频率退化的贡献。提出了一种新型的3xVDD容限的静电（ESD）保护电路。 项目组已发表论文82篇，其中SCI收录35篇，EI收录26篇，承办国际会议一次，培养博士9名，硕士16名，申请专利10项，已授权1项。对照项目的研究内容和计划任务，本项目已全面完成计划，研究工作取得突出结果。

成果综合统计
成果类型
数量
  • 期刊论文
  • 会议论文
  • 专利
  • 获奖
  • 著作
  • 74
  • 27
  • 0
  • 0
  • 0
期刊论文
场板抑制GaN高电子迁移率晶体管电流崩塌的机理研究
Characterization Analysis of UDSM LVTSCR Under TLP Stress
Effect of Interface-Traps and Oxide-Charge on Drain Current Degradation in Tunneling Field-Effect Tr
Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing t
Two-Dimensional Analytical Model for Fully Depleted Dual-Material Gate Strained Silicon-on-Insulator
Impact of Gate Dielectric Curvature on the Nano-Wire MOSFETs Performance and Scaling
Two ESD Detection Circuits for 3×VDD Tolerant I/O Buffer in Low-voltages CMOS Processes with L
Reliability of High Mobility InGaAs Channel n-MOSFETs under BTI Stress
Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate MOS
Electrical characteristics of SiGe-on insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET
Numerical analysis of the self-heating effect in SGOI with a double step buried oxide
A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate str
Quasi-Ballistic Transport and Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs
Logarithm Cofactor Difference Extrema Method of MOSFET's Post-Breakdown Current and Application
Analytic Yet Continuous Surface Potential versus Voltage Equation of Intrinsic Nanoscale Surrounding
Application of Multi-frequency Test and Neural Network to Fault Diagnosis in Analog Circuits
Compact Modeling of Parameter Variations of Nanoscale CMOS due to Random Dopant Fluctuation
A Nonlinear Poisson-Schrodinger Solver Under Cylindrical Coordinate for Quantum Effect in Nanowire M
应变SGOI PMOSFET的阈值电压解析模型
应变Si1-xGex n型金属氧化物半导体场效应晶体管反型层中的电子迁移率模型
Field-Based 3D Capacitance Modeling for sub-45-nm On-chip Interconne
总计量辐照条件下部分耗尽SOINMOS器件的三种kink效应
Temperature Dependence of the Interface State Distribution due to Hot Carrier Effect in FinFET Devic
Diode parameter extraction by a linear cofactor difference operation method
Defects Detection of IC Wafer Based on Spectral Subtraction
Defect Detection of IC Wafer Based on Two-dimension Wavelet Transform
Characteristics Analysis and Optimization Design of a New ESD Power Clamp Circuit
A comparative study of self-heating effect of nMOSFETs fabricated on SGOI and SGSOAN substrates
The study on two-dimensional analytical model for gate stack fully depleted strained Si on SGOI MOSF
Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOS
Gate Tunneling in Nano-Wire MOSFETs
Improvement in Reliability of Tunneling Field Effect Transistor with PNIN Structure
Forward gated-diode method for parameter extraction of MOSFETs
Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity
An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold
A Novel High Performance ESD Power Clamp Circuit with Small Area
A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped LDD st
The influence and explanation of FIBL on sub-100 nm MOSFETs with high-k gate dielectric
Parameter Extraction of Nano-Scale MOSFET by Forward Gated-Diode Method
Neural Network Method to Model Nanoscale MOSFET Characteristics
基于可测性分析的模拟电路多频测试矢量生成
Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric U
Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors
Diagram Representations of Charge Pumping Processes in the CMOS Transistors
A novel ESD power supply clamp circuit with double pull-down paths
A compact diode array model for phase change memory application
Polynunomial Effective Channel Mobility Based Above-Threshold Current Model for Undoped Polycrystall
高k栅介质应变硅Si SOI MOSFET的阈值电压模型
Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity
Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs
Numerical study on the effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM perf
量子阱Si/SiGe/Si p型场效应管阈值电压和沟道空穴面密度模型
A pinned photo diode analytic model enabling opt-electronic circuit simulation
新型SOANN埋层SOI器件的自加热效应研究
应变Si/Si1-xGex n型金属氧化物半导体场效应晶体管反型层中的电子迁移率模型
应变绝缘层上硅锗p型金属氧化物场效应晶体管的阈值电压解析模型
低剂量率^60Co γ射线辐照下SOI MOS器件的退化机理
异质栅全耗尽应变硅金属氧化物半导体模型化研究
Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs
总剂量辐照条件下部分耗尽半导体氧化物绝缘层N沟道金属氧化物半导体器件的三种kink效应
前驱体和退火温度对Nd2O3薄膜组分影响的定量研究
三维H形栅SOINMOS器件总剂量条件下的单粒子效应
非对称Halo异质栅应变Si SOI MOSFET的二维解析模型
NMOS器件中单粒子瞬态电流收集机制的二维数值分析
偏置条件对SOINMOS器件总剂量辐照效应的影响
栅长对PDSOINMOS器件总剂量辐照效应影响的实验研究
考虑量子效应的高k栅介质SOIMOSFET特性研究
Diagram representations of charge pumping processes in CMOS transistors
Clear correspondence between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F-N stress tests
会议论文
An Empirical Model for Static I-V Characteristics of Double Gate Tunneling Field Effect Transistor
Random Dopant Fluctuation Effects on Double Gate Tunneling FET Performance
A Modified ESD Clamp Circuit for 90-nm CMOS Process
Off-state leakage current of nano-scaled MOSFETs with high-k gate dielectric
Fault Diagnosis of Analog Circuits Based on Multi-frequency Test and Neural Network Method
Analytical Drain Current Model for Organic Thin-Film Transistors
Investigation of Electrical Characteristics of NdAlO3/SiO2 Stack Gate
Positive Bias Temperature Instability Degradation of InGaAs n-MOSFETs with Al2O3 Gate Dielectric
Effect of Structural Parameters on the Performance and Variations of Nanosizes PNIN Tunneling Field
Investigations of Fin Vertical Nonuniformity Effects on Junctinless Multigate Transistor
Investigation of Tunneling Field Effect Transistor Reliability
An Improved Design of Si PNIN Tunneling Field Effect Transistor
Forward Gated-Diode Method for Extracting Gate Oxide Thickness and Body Doping Concentration
Logarithm Cofactor Difference Extrema of MOS Devices’ Post-Breakdown Current and Application t
A Novel Simulation Technology of Fin-width Line Edge Roughness Effects in FinFETs
Investigation of Schottky Junction and MOS Technology for III-V Compound Semiconductor MOSFET Applic
Conduction Mechanism of Self-Rectifying n+Si-HfO2-Ni RRAM
A Simple Leakage Current Model for Polycrystalline Silicon Nanowire Thin-Film Transistors
Multi-frequency Test for Analog Circuits
Numerical Study on Effects of Random Dopant Fluctuation in Double Gate Tunneling FET
ESD Detection Circuit with Reverse-used RC Network in a 90-nm CMOS Process
Simulation on Random Dopant Fluctuation Effect Impact on Double Gate MOSFET and Corresponding 6-T SR
A Charge Based Non-Quasi-Static Transient Medel for SOI MOSFETs
Modeling of Dynamic Threshold Voltage of High K Gate Stack and Application in FinFET Reliability Sim
Field-Based Parasitic Capacitance Models for 2D and 3D sub-45-nm Interconnect
Reliability of Inversion Channel InGaAs n-MOSFETs
A Reliability Model for CMOS Circuit Based on Device Degradation
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黄大鸣的项目
半导体光电子学
新型纳米MOS器件的低频噪声特性
SiGe/Si应变层超晶格的结构稳定性研究
硅基纳米材料和器件结构的电力显微学研究
GeSi/Si应变层量子阱中激子发光的探测和研究
过渡金属硫化物场效应晶体管的表面、界面及其应力退化特性
隧穿场效应晶体管的结构、特性与模型
半导体低维量子体系中的双激子特性研究