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总计量辐照条件下部分耗尽SOINMOS器件的三种kink效应
  • 期刊名称：物理学报
  • 时间：2013
  • 页码：036105-
  • 相关项目：纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
作者： 卓青青|刘红侠|彭里|杨兆年|蔡惠民|
同期刊论文项目
纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
期刊论文 74 会议论文 27
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