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Stable Si-based pentagonal monolayers: high carrier mobilities and applications in photocatalytic wa
  • ISSN号：2050-7488
  • 期刊名称：Journal of Materials Chemistry A
  • 时间：2015.10.23
  • 页码：24055-24063
  • 相关项目：非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
作者： Ying Dai|Mengmeng Li|Wei Wei|Baibiao Huang|
同期刊论文项目
非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
期刊论文 69 获奖 16
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