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Halogenated Two-Dimensional Germanium: a Candidate Material Being of Quantum Spin Hall State
  • ISSN号：0959-9428
  • 期刊名称：Journal of Materials Chemistry
  • 时间：2012.4.30
  • 页码：12587-12591
  • 相关项目：非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
作者： Yandong Ma|Ying Dai|Chengwang Niu|Baibiao Huang|
同期刊论文项目
非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
期刊论文 69 获奖 16
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