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Tunable electronic and dielectric behavior of GaS and GaSe monolayers
  • 期刊名称：PhysChemChemPhys
  • 时间：2013.3.14
  • 页码：7098-7105
  • 相关项目：非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
作者： Yandong Ma, Ying Dai, Meng Guo, Lin Yu, Baibiao H|
同期刊论文项目
非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
期刊论文 69 获奖 16
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