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Surface termination effect on the quantum confinement and electron affinities of 3C-SiC quantum dots
  • ISSN号：2040-3364
  • 期刊名称：Nanoscale
  • 时间：2012.2.1
  • 页码：1592-1597
  • 相关项目：非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
作者： Zhenkui Zhang, Ying Dai, Lin Yu, Meng Guo, Baibiao|
同期刊论文项目
非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
期刊论文 69 获奖 16
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