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Manipulation of topological surface states and its mechanism in Bi2Se3,family by 2p light elements
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2012.6.20
  • 页码：252410-
  • 相关项目：非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
作者： Chengwang Niu, Ying Dai, et al.|
同期刊论文项目
非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
期刊论文 69 获奖 16
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