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Role of Cu Doping in SnO2 Sensing Properties Toward H2S
  • ISSN号：1932-7447
  • 期刊名称：Journal of Physical Chemistry C
  • 时间：2011.9.29
  • 页码：18597-18602
  • 相关项目：非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
作者： Wei, Wei|Dai, Ying|Huang, Baibiao|
同期刊论文项目
非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
期刊论文 69 获奖 16
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