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Strain‐Engineered Modulation on the Electronic Properties of Phosphorous‐Doped ZnO
  • ISSN号：1439-7641
  • 期刊名称：ChemPhysChem
  • 时间：2013.12.1
  • 页码：3916-3924
  • 相关项目：非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
作者： Ying Dai|Wei Wei|Yingtao Zhu|Baibiao Huang|
同期刊论文项目
非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
期刊论文 69 获奖 16
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