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Robust Two-Dimensional Topological Insulators inMethyl-Functionalized Bismuth, Antimony, and Lead Bi
  • ISSN号：1530-6984
  • 期刊名称：Nano Letters
  • 时间：2015.1.5
  • 页码：1083-1089
  • 相关项目：非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
作者： Ying Dai|Liangzhi Kou|Thomas Frauenheim|Thomal Heine|
同期刊论文项目
非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
期刊论文 69 获奖 16
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