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Two-dimensional inversion-asymmetric topologicalinsulators in functionalized III-Bi bilayers
  • ISSN号：1098-0121
  • 期刊名称：Physical Review B
  • 时间：2015.6.8
  • 页码：235306-
  • 相关项目：非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
作者： Binghai Yan|Chengwang Niu|Ying Dai|Thomas Heine|
同期刊论文项目
非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
期刊论文 69 获奖 16
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