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Engineering a topological phase transition in beta-InSe via strain
  • ISSN号：1367-2630
  • 期刊名称：New Journal of Physics
  • 时间：2013.7.2
  • 页码：073008-073012
  • 相关项目：非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
作者： Ying Dai|Lin Yu|Chengwang Niu|Baibiao Huang|
同期刊论文项目
非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
期刊论文 69 获奖 16
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