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Quantum anomalous Hall effect in doped Ternary Chalcogenide topological insulators TlBiTe2 and TlBiS
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2011.10.4
  • 页码：142502-
  • 相关项目：非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
作者： Lin Yu|Meng Guo|Yandong Ma|Baibiao Huang|
同期刊论文项目
非过渡金属杂质、缺陷对拓扑绝缘体材料改性的理论研究
期刊论文 69 获奖 16
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