欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
利用分子束外延系统在Si（001）衬底上制备了单晶Tm_2O_3薄膜,利用X射线光电子能谱研究了Tm_2O_3相对于Si的能带偏移.得出Tm_2O_3相对于Si的价带和导带偏移分别为3.1 eV±0.2 eV和1.9 eV±O.3 eV并得出了Tm_2O_3的禁带宽度为6.1 eV±0.2 eV.研究结果表明Tm_2O_3是一种很有前途的高κ栅介质候选材料.
英文摘要：
The single crystalline Tm_2O_3 films are deposited on Si（001） substrates by molecular beam epitaxy,by using x-ray photoelectron spectroscopy,the valence and the conduction-band shifts of Tm_2O-3 to Si are obtained to be 3.1±0.2 eV and 1.9±0.3 eV,respectively. The energy gap of Er_2O_3 is determined to be 6.1±0.2 eV.The results of the study show that the Tm_2O_3 could be a promising candidate for high-κgate dielectrics.
同期刊论文项目
同项目期刊论文
Band offsets of epitaxial Tm2O3 high-k dielectric films on Si substrates by X-ray photoelectron spec
Composition dependence of interface control and optimization on the performance of an HfTiON gate di
Optical constants of Al-doped Er(2)O(3) films prepared by radio frequency reactive magnetron sputter
Band alignment and band gap characterization of La2O3 films on Si substrates grown by radio frenqenc
A model for the frequency dispersion of the high-k metal-oxide-semiconductor capacitance in accumula
Single-photon transport properties in a one-dimensional resonator waveguide coupled to a whispering-
期刊信息
位置：