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Er2O3栅介质积累端电容频率色散效应的研究

期刊名称：功能材料
时间：0
页码：2085-2088
语言：中文
分类：TB383[一般工业技术—材料科学与工程] TB43
作者机构：[1]Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China, [2]Department of Physics, Shaoxing University, Shaoxing 312000, China
相关基金：Project supported by the China Postdoctoral Science Foundation and Shaoxing Science and Technology Commission （Grant No 2007A21015）, also partially supported by the Project of Shanghai Nanotechnology （Grant No 0852NM02400） and the National Natural Science Foundation of China （Grant No 60806031）.
相关项目：非晶稀土氧化物高k栅介质材料的制备及物理特性研究

关键词：退火温度, 非晶薄膜, 结构模型, 氧化铒, 高分辨透射电子显微镜, 电特性, Si(001)衬底, 结构演变, Er2O3, gate dielectric, amorphous

中文摘要：

Amorphous Er 2 O 3 films are deposited on Si (001) substrates by using reactive evaporation.This paper reports the evolution of the structure,morphology and electrical characteristics with annealing temperatures in an oxygen ambience.X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700 C.The capacitance in the accumulation region of Er 2 O 3 films annealed at 450 C is higher than that of as-deposited films and films annealed at other temperatures.An Er 2 O 3 /ErO x /SiO x /Si structure model is proposed to explain the results.The annealed films also exhibit a low leakage current density (around 1.38 × 10 4 A/cm 2 at a bias of 1 V) due to the evolution of morphology and composition of the films after they are annealed.更多还原

英文摘要：

Amorphous Er2O3 films are deposited on Si （001） substrates by using reactive evaporation. This paper reports the evolution of the structure, morphology and electrical characteristics with annealing temperatures in an oxygen ambience. X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700 ℃. The capacitance in the accumulation region of Er2O3 films annealed at 450 ℃ is higher than that of as-deposited films and films annealed at other temperatures. An Er2O3/ErOx/SiOx/Si structure model is proposed to explain the results. The annealed films also exhibit a low leakage current density （around 1.38 × 10^-4 A/cm^2 at a bias of -1 V） due to the evolution of morphology and composition of the films after they are annealed.

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