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Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells
  • ISSN号：1386-9477
  • 期刊名称：Physica E: Low-Dimensional Systems and Nanostructu
  • 时间：2014.8
  • 页码：55-58
  • 相关项目：多量子阱中无应变AlInGaN四元合金势垒的应变补偿结构制备及发光性质研究
作者： P. Han|Y. Shi|R. Zhang|Y.D. Zheng|
同期刊论文项目
多量子阱中无应变AlInGaN四元合金势垒的应变补偿结构制备及发光性质研究
期刊论文 28
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