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Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-
  • ISSN号：0957-4484
  • 期刊名称：Nanotechnology
  • 时间：2015.3.27
  • 页码：-
  • 相关项目：多量子阱中无应变AlInGaN四元合金势垒的应变补偿结构制备及发光性质研究
作者： Tao, Tao|Li, Yi|Zheng, Youdou|Zhang, Rong|
同期刊论文项目
多量子阱中无应变AlInGaN四元合金势垒的应变补偿结构制备及发光性质研究
期刊论文 28
同项目期刊论文
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GaN hexagonal pyramids formed by a photo-assisted chemical etching method
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