欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
主要通过低温和室温变功率光致发光（PL）谱的实验手段,研究了 GaN纳米柱和对应薄膜（作为参考）的量子效率表现.实验中发现在室温,激发光功率为0.5 mW时,GaN纳米柱的积分 PL强度是薄膜的12.2倍,这表明GaN纳米柱具有比薄膜更高的内量子效率和光引出效率.另外,依据高低温积分 PL 强度比的方法计算得到激发光功率0.5 mW时,GaN纳米柱的内量子效率低于薄膜,该计算结果违背由实验现象得到的结果,这表明该内量子效率的计算方法是不合适的,因而建立了一种新模型,得到 GaN纳米柱和薄膜的内量子效率比随激发光功率的变化规律,结果表明 GaN纳米柱的内量子效率表现显著优于薄膜.
英文摘要：
The purpose of the study is to compare the quantum efficiency performance of GaN nanorods and as-grown planar by excitation power dependent photoluminescence（PL）at the temperature of 6 and 300K.An enhancement of 12.2 times in the room temperature integrated PL intensity is observed from the GaN nanorods,in comparison to that of as-grown planar, with the excitation power of 0.5 mW.This large integrated PL intensity enhancement of GaN nanorods can be attributed to the improvement of internal quantum efficiency （IQE）as well as light extraction efficiency.However,the IQE of GaN nanorods is smaller than that of as-grown planar by using traditional method of calculating IQE,defined as IQE=IPL300K/IPL6K ,with the excitation power of 0.5 mW,which is opposite to the above experimental phenomena.It means that the traditional method is inappropriate.Therefore,a new model for calculating IQE is put forward.According to the new model, the ratio of IQE of GaN nanorods over that of as-grown planar as a function of excitation power at 6 and 300K can be＆amp;nbsp;achieved.The result turns out that the IQE performance of GaN nanorods is significantly better than that of as-grown planar,which is in agreement with the above experimental phenomena.
同期刊论文项目
同项目期刊论文
Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nan
Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-
Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium-gallium-zin
Performance comparison of front- and back-illuminated AlGaN-based metal-semiconductor-metal solar-bl
Bias-selective dual-operation-mode ultraviolet schottky-barrier photodetectors fabricated on high-re
Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-met
Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film T
High-indium-content InGaN quantum-well structure grown pseudomorphically on a strain-relaxed InGaN t
Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal-Semiconductor-Metal Photodetectors for High-Tem
Improvements in Microstructure and Leakage Current of High-In-Content InGaN p-i-n Structure by Annea
High Quantum Efficiency GaN-Based p-i-n Ultraviolet Photodetectors Prepared on Patterned Sapphire Su
Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Qua
Investigation of optical properties of InGaN-InN-InGaN/GaN quantum-well in the green spectral regime
Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfa
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuat
Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1-xN films with
Study of Rashba spin splitting and intersubband spin-orbit coupling effect in AlGaN/GaN quantum well
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100)
The growth and properties of m-plane InN epilayer on LiAlO2(100) by metal-organic chemical vapor dep
Ultraviolet emission efficiencies of Al(x)Ga(1-x)N films pseudomorphically grown on Al(y)Ga(1-y)N te
Influence of biaxial strain on near-band-edge optical properties of c- and a-plane wurtzite-InN film
AlGaN-based 330 nm resonant-cavity-enhanced p-i-n junction ultraviolet photodetectors using AlN/AlGa
The parameters in the band-anticrossing model for In (x) Ga1-x N (y) P1-y before and after annealing
Effectr of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped
Temperature dependence of the point defect properties of GaN thin films studied by terahertz time do
Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoim
Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN
A Band-Gap Energy Model of the Quaternary Alloy In_xGa_yAl_(1-x-y)N using Modified Simplified Cohere
Impact of anisotropic strains on low-frequency dielectric properties and room-temperature polar phas
The Research on GaN Based Multiple Quantum Well LEDs withNanopillar Arrays for EnhancingLight-emitti
A modified simplified coherent potential approximation model of band gap energy of III-V ternary all
期刊信息
位置：