东篱科研大数据发现系统（DRDS）

位置：成果数据库 > 期刊 > 期刊详情页

GaN hexagonal pyramids formed by a photo-assisted chemical etching method

ISSN号：1674-1056
期刊名称：《中国物理B：英文版》
时间：0
分类：TN305.2[电子电信—物理电子学] TN304.23[电子电信—物理电子学]
作者机构：[1]Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China, [2]College of Optoelectronics Engineering, Zaozhuang University, Zaozhuang 277160, China
相关基金：Project supported by the National Basic Research Program of China （Grant Nos. 2011CB301900, 2012CB619304, and 2010CB327504）, the National High Technology Research and Development Program of China （Grant No. 2011AA03A103）, the National Nature Science Foundation of China （Grant Nos. 60990311, 60906025, 60936004, and 61176063）, and the Natural Science Foundation of Jiangsu Province, China （Grant Nos. BK2011010 and BK2009255）.

作者：张士英[1,2], 修向前[1], 华雪梅[1], 谢自力[1], 刘斌[1], 陈鹏[1], 韩平[1], 陆海[1], 张荣[1], 郑有炓[1]

关键词：化学刻蚀, GAN, 光辅助, 棱锥, 蚀刻条件, 光致发光光谱, 溶液浓度, 氮化镓, hexagonal pyramids, GaN, photo-assisted chemical etching

中文摘要：

A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a convenient photo-assisted chemical(PAC) etching method. The solution concentration has an evident influence on the surface morphology of GaN and the optimal solution concentrations for GaN hexagonal pyramids have been identified. GaN with hexagonal pyramids have higher crystal quality and tensile strain relaxation compared with as-grown GaN. A detailed analysis about evolution of the size, density and optical property of GaN hexagonal pyramids is described as a function of light intensity. The intensity of photoluminescence spectra of GaN etched with hexagonal pyramids significantly increases compared to that of as-grown GaN due to multiple scattering events, high quality GaN with pyramids and the Bragg effect.

英文摘要：

A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a con-venient photo-assisted chemical （PAC） etching method. The solution concentration has an evident influence on the surface morphology of GaN and the optimal solution concentrations for GaN hexagonal pyramids have been identified. GaN with hexagonal pyramids have higher crystal quality and tensile strain relaxation compared with as-grown GaN. A detailed anal- ysis about evolution of the size, density and optical property of GaN hexagonal pyramids is described as a function of light intensity. The intensity of photoluminescence spectra of GaN etched with hexagonal pyramids significantly increases compared to that of as-grown GaN due to multiple scattering events, high quality GaN with pyramids and the Bragg effect.