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中文摘要：
集成电路（IC）装备工艺腔室内流场的均匀性是影响镀膜质量的关键因素。本文通过控制真空腔室入口处N2流量（140,230,320 mL/min（标准状态））和出气口处压强值（36,45,55 Pa）来设置实验,采用压力管法测量低压腔室内任一点的压强值和薄膜规直接测量腔壁、出气口的压强值来实现腔室内压强分布的研究和压差的测量。讨论了腔壁与出气口之间的压差对压力管法的测量误差的影响;选择了二级匀气装置对进入腔室内的气体进行布气,通过比较腔室内同一水平面上各点与出气口之间的压差是否恒定来分析二级匀气盘的匀气效果。试验研究发现：在距离腔室中心150 mm的范围内,二级匀气装置的布气效果明显;本文采用的压力管法测量腔室内压强的误差与腔室进气量和腔室内流速存在内在联系。研究结果对IC装备设计及工艺控制有一定的指导意义。
英文摘要：
The pressure distribution,particularly the pressure difference between the chamber wall and the outlet,was measured in pressure tube method and with CDG thin-film vacuum gauges,in the chamber pumped in N2 injection mode and dedicated to integrated circuit（IC） fabrication.The influence of the realistic situation,including but not limited to the N2 flow-rate at the inlet,pressure at the outlet and secondary gas homogenizer,on the distribution uniformity of the N2-partial pressure and the measurement error was investigated.The results show that depending little on the N2 flow-rate and outlet pressure,the secondary homogenizer is capable of uniformly distributing the N2-partial pressure in 150 mm range of the chamber＇ s center,and that the intake volume and average gas-velocity in the chamber all have a major impact on the uncertainty measured in pressure tube method.We suggest that the preliminary results be of some technological interest for IC industry.
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