磁致电阻行为和在 nanoscale 的 NiFe/Cu/CoFe/IrMn 旋转阀门巨人磁致电阻(SV-GMR ) 的磁化颠倒模式被 nanosized 试验性地并且理论上调查磁性的模拟方法。基于 Landau-Lifshitz-Gilbert 方程,有特殊 gridding 的一个模型被建议计算巨大的磁致电阻比率(先生) 并且调查磁化颠倒模式。在先生和外部磁场之间的关系被获得并且分析。进磁化分发的变化的研究表明磁化颠倒模式,也就是说为 NiFe/Cu/CoFe/IrMn 的 jump 变化模式,极大地取决于联合在卡住的层和 antiferromagnetic 层之间的行为的 antiferromagnetic。切换的领域与交换系数是几乎线性的,这也被发现。
The magnetoresistance behavior and the magnetization reversal mode of NiFe/Cu/CoFe/IrMn spin valve giant magnetoresistance (SV-GMR) in nanoscale were investigated experimentally and theoretically by nanosized magnetic simulation methods. Based on the Landau-Lifshitz-Gilbert equation, a model with a special gridding was proposed to calculate the giant magnetoresistance ratio (MR) and investigate the magnetization reversal mode. The relationship between MR and the external magnetic field was obtained and analyzed. Studies into the variation of the magnetization distribution reveal that the magnetization reversal mode, that is, the jump variation mode for NiFe/Cu/CoFe/IrMn, depends greatly on the antiferromagnetic coupling behavior between the pinned layer and the antiferromagnetic layer. It is also found that the switching field is almost linear with the exchange coefficient.