中文摘要：

针对晶圆边缘非垂直刻蚀剖面问题,对300mm双频容性耦合等离子体刻蚀机晶圆边缘离子平均入射角度的分布特性进行了数值模拟研究。采用流体动力学模型求解等离子体宏观特性,氩气作为工艺气体,以一个射频周期内平均离子通量的矢量方向近似为离子平均入射角度,研究发现：边缘效应导致的晶圆边缘鞘层畸变是引起离子平均入射角度偏斜垂直方向的主要原因;晶圆外伸量与可利用半径近似呈负相关关系,且只会影响晶圆边缘向内约10-15mm区域的离子平均入射角度分布;上接地板半径和喷淋头半径影响范围较大,在晶圆半径超过100mm外均有较大影响;适当增大上接地板半径有利于提高离子平均入射角度的垂直性和增大晶圆的有效利用面积,而喷淋头半径在略小于晶圆半径时较佳。

英文摘要：

The dual-frequency capacitively coupled plasma（DF-CCP）discharge in etching 300 mm Siwafer was approximated,modeled based on fluid dynamics,and simulated with CFD-ACE＋ software.The impact of the radii of the upper grounding ring and showerhead on the averaged ion incident angles（AIIAs）distribution around the edges were investigated.The orientation of ion flux vector,in argon discharge,was approximated as the averaged ion incident angle.The simulated results show that the sheath distortion,caused by the edge effect,has a major impact on the off-normal tilt of AIIAs on wafer periphery.The negative correlation between the overhanging size and available radius of the wafer strongly affects the AIIAs distribution in area 10~15mm from the edges.The AIIAs distribution significantly depends on the radii of both upper grounding ring and showerhead.For example,an increased radius of the upper grounding ring and a shower-head radius slightly smaller than wafer radius favorably improve the effective area,verticality and uniformity of AIIAs.