中文摘要：

采用彩色金相技术对“嵌入式”Cu/Ni扩散偶真空扩散处理时的界面迁移现象进行了观测,并研究了Cu/Ni界面间的扩散行为.结果表明,扩散偶在退火温度1123～1223K、保温时间25～150h（0.9×10^5～5.4×10^5s）的工艺条件下反应,Cu/Ni界面间结构由α/β转变为α/α＇/β,其中α＇为扩散层,实质是成分不均匀的固溶体,Cu/Ni界面间扩散行为是Kirkendall效应的一种显现,即界面上Cu和Ni元素均发生了扩散,但主要是Cu原子向Ni层的扩散.最后在试验数据基础上发现,扩散层厚度L与退火时间t之间满足抛物线L=K（t/t0）^n关系.

英文摘要：

The interface migration phenomenon of ＂embeded＂ Cu/Ni diffusion couples was investigated with color metallography technique during vacuum diffusion process ,and the diffusion behavior on the Cu/Ni interface was studied. The results show that the Cu/Ni interface structure changes from α/β to α/α’/β when the couples annealed at the temperature range of 1123-1223K for various time between 25h and 150h（0. 9×10^5 and 5.4×10^5s） ,in which α’ is a diffusion layer. In fact ,α’ is an asymmetric solid solution. The diffusion characteristic between Cu and Ni justcan be demonstrated by Kirkendall effect that the interdiffusion of Cu-Ni elements at interface is existent and the main diffusion is the diffusion of Cu element to Ni layer. Finally, a relationship of L=K（t/t0）^n was found which shows that the thickness L of the α＇ layer increases with the increase of annealing time t.