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An Empirical Model for Static I-V Characteristics of Double Gate Tunneling Field Effect Transistor
  • 所属机构名称：复旦大学
  • 会议名称：Proc. 2013 10th IEEE International Conference on ASIC (ASICON)
  • 时间：2013.10.10
  • 成果类型：会议
  • 相关项目：纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
作者： D. Huang|C. J. Yao|D. H. Shi Li|M. F. Li|
同会议论文项目
纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
期刊论文 74 会议论文 27
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