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Positive Bias Temperature Instability Degradation of InGaAs n-MOSFETs with Al2O3 Gate Dielectric
  • 所属机构名称：复旦大学
  • 会议名称：IEDM tech. Dig.
  • 时间：2011.12.12
  • 成果类型：会议
  • 相关项目：纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
作者： G. F. Jiao|W. Cao|Y. Xuan, et al.,|
同会议论文项目
纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
期刊论文 74 会议论文 27
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