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Numerical Study on Effects of Random Dopant Fluctuation in Double Gate Tunneling FET
  • 所属机构名称：复旦大学
  • 会议名称：EDSSC, 2013 IEEE International Conference of
  • 时间：2013.6.6
  • 成果类型：会议
  • 相关项目：纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
作者： Ying Zhu|Yun Ye|Yu Cao, et al.,|
同会议论文项目
纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
期刊论文 74 会议论文 27
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