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Modeling of Dynamic Threshold Voltage of High K Gate Stack and Application in FinFET Reliability Sim
  • 所属机构名称：复旦大学
  • 会议名称：NSTI-Nanotech 2012
  • 时间：2012.6.6
  • 成果类型：会议
  • 相关项目：纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
作者： Yun Ye|Hongyu He|Chenyue Ma, et al.,|
同会议论文项目
纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
期刊论文 74 会议论文 27
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