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A Charge Based Non-Quasi-Static Transient Medel for SOI MOSFETs
  • 所属机构名称：复旦大学
  • 会议名称：NSTI-Nanotech 2012
  • 时间：2012.6.6
  • 成果类型：会议
  • 相关项目：纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
作者： Jian Zhang|Jin He|Yun Ye, et al.,|
同会议论文项目
纳米CMOS器件的可靠性表征技术、失效机理及预测模型研究
期刊论文 74 会议论文 27
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