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Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
  • ISSN号：0168-583X
  • 期刊名称：Nuclear Instruments and Methods in Physics Researc
  • 时间：2013.7.15
  • 页码：463-467
  • 相关项目：Ⅲ-Ⅴ族半导体衬底上铪基高k栅介质界面特性研究
作者： Xu, Dawei|Wang, Zhongjian|Xia, Chao|Yu, Yuehui|
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Ⅲ-Ⅴ族半导体衬底上铪基高k栅介质界面特性研究
期刊论文 21 会议论文 2
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