中文摘要：

摘要：对具有不同的栅极场板结构的p-GaN栅高迁移率晶体管（HEMT）器件的性能进行了比较，利用半导体器件仿真工具SynopsysTCAD对器件电学特性进行了仿真。仿真结果表明，具有P—GaN栅的GaNHEMT器件阈值电压为1．5V。采用栅极场板能缓解电场的集中程度，当场板长度为5μm时，器件击穿电压达到1100V。间断型栅极场板能在场板间隙中产生新的电场峰值，更充分地利用漂移区耐压，器件的击穿电压可达到1271V。栅极场板与A1GaN势垒层的距离影响场板对漂移区电场的调控作用，当栅极场板下方介质层厚度为0．24μm时，器件的击穿电压可达1255V。

英文摘要：

Different gate field-plates of the GaN high electron mobility transistor （HEMT） with p-GaN gate structure were compared and the electrical characteristic was simulated by Synopsys TCAD. Simulation results show that a positive threshold voltage of the GaN HEMT device with the p-GaN gate structure is 1.5 V. The electric field near the gate edge is relaxed by the gate field-plates, and the breakdown voltage is hugely improved to 1 100 V when the gate filed-plate length is 5 μm. A new peak of electric filed can be produced in the gap of the interval gate field-plates, and the breakdown voltage is further improved to 1 271 V. The effect of the gate field plates is closely influenced by the distance between the gate field-plates and A1GaN barrier layer, and the breakdown voltage is improved to 1 255 V when the distance is 0. 24μm.