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Properties of LaAlO3 thin film on GaAs(100) treated by in situ NH3 plasma
  • ISSN号：0168-583X
  • 期刊名称：Nuclear Instruments and Methods in Physics Researc
  • 时间：2013.7.15
  • 页码：349-352
  • 相关项目：Ⅲ-Ⅴ族半导体衬底上铪基高k栅介质界面特性研究
作者： Wang, Z. J.|Xia, C.|Zhang, Y. W.|Yu, Y. H.|
同期刊论文项目
Ⅲ-Ⅴ族半导体衬底上铪基高k栅介质界面特性研究
期刊论文 21 会议论文 2
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