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Competitive Si and La effect in HfO2 phase stabilization in multi-layer (La2O3)0.08(HfO2) films
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2013
  • 页码：081607-
  • 相关项目：Ⅲ-Ⅴ族半导体衬底上铪基高k栅介质界面特性研究
作者： Duo Cao,*Xinhong cheng,Yuehui Yu, Xiaolong Li, Chunze Liu, Da|
同期刊论文项目
Ⅲ-Ⅴ族半导体衬底上铪基高k栅介质界面特性研究
期刊论文 21 会议论文 2
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