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Total-Dose Radiation Response of HfLaO Films Prepared by Plasma Enhanced Atomic Layer Deposition
  • ISSN号：0018-9499
  • 期刊名称：IEEE Transactions on Nuclear Science
  • 时间：2013.4
  • 页码：1373-1378
  • 相关项目：Ⅲ-Ⅴ族半导体衬底上铪基高k栅介质界面特性研究
作者： Wang, Zhongjian|Xia, Chao|Yu, Yuehui|Shen, Dashen|
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Ⅲ-Ⅴ族半导体衬底上铪基高k栅介质界面特性研究
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