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Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment
  • ISSN号：0167-9317
  • 期刊名称：Microelectronic Engineering
  • 时间：2012.5
  • 页码：15-18
  • 相关项目：Ⅲ-Ⅴ族半导体衬底上铪基高k栅介质界面特性研究
作者： Xia, Chao|Cao, Duo|Yu, Yuehui|Shen, DaShen|
同期刊论文项目
Ⅲ-Ⅴ族半导体衬底上铪基高k栅介质界面特性研究
期刊论文 21 会议论文 2
同项目期刊论文
Properties of LaAlO3 thin film on GaAs(100) treated by in situ NH3 plasma
Total-Dose Radiation Response of HfLaO Films Prepared by Plasma Enhanced Atomic Layer Deposition
Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
Competitive Si and La effect in HfO2 phase stabilization in multi-layer (La2O3)0.08(HfO2) films
Al2O3–Gd2O3 double-films grown on graphene directly by H2O-assisted atomic layer deposition
Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition
HfO2 dielectric film growth directly on graphene by H2O-based atomic layer deposition
Improvement of Al2O3 Films on Graphene Grown by Atomic Layer Deposition with Pre-H2O Treatment
Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
采用水基原子层沉积工艺在石墨烯上沉积Al_2O_3介质薄膜研究
SiGe上NbAlO栅介质薄膜微结构和电学性能分析
Al_2O_3对应变SiGe上HfO_2薄膜的热稳定性和电学可靠性的影响(英文)
Effects of rapid thermal annealing on properties of HfAlO films directly deposited by ALD on graphen
采用水基原子层沉积工艺在石墨烯上沉积Al2O3介质薄膜研究
Studies on H2O-based Atomic Layer Deposition of Al2O3 Dielectric on Pristine Graphene
A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate
p—GaN栅结构GaN HEMT的场板结构研究
PEALDHfO2栅介质薄膜的界面优化及其特性表征