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Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
  • ISSN号：1553-1813
  • 期刊名称：Journal of Vacuum Science and Technology A
  • 时间：2014.1
  • 页码：-
  • 相关项目：Ⅲ-Ⅴ族半导体衬底上铪基高k栅介质界面特性研究
作者： Xia, Chao|Shen, Lingyan|Yu, Yuehui|Shen, DaShen|
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Ⅲ-Ⅴ族半导体衬底上铪基高k栅介质界面特性研究
期刊论文 21 会议论文 2
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