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中文摘要：
本文介绍了一种薄膜基底与镁源蒸发放置在不同温区的混合物理化学气相法（HPCVD）制备MgB2超导薄膜的技术．以B2Hs为硼源，在（0001）取向的Al2O3单晶基底上在不同的基底温度下制备了MgB．e超导薄膜．采用扫描电子显微镜（SEM）、X射线衍射（XRD）和标准四线法电阻测量分析了基底沉积温度对生成的MgBe薄膜的表面形貌、晶体结构、超导转变温度的影响．结果表明，随着基底温度的升高，MgB2相结晶程度提高，C轴取向程度增强、薄膜整体性能显著提高．基底温度为853K时制备的MgBe薄膜的超导电性最为优异：其超导起始转变温度高达39．85K，△T为0．32K．
英文摘要：
We developed a new preparation method of magnesium diboride films via single-step hybrid physical- chemical vapor deposition（HPCVD）, through controlling different temperature of the substrates and the magnesium vapor. The superconducting MgB2 thin films have been prepared on A12 03 （0001） substrate by using B2H6 at different substrate temperature. Scanning electron microscopy, X-ray diffraction, four-point probe method were carried out to study the effect of the substrate temperature on the superconductivity of MgB2 thin films. The results showed that the MgB2 thin films have a preferred crystallization, c-axis orientation and Superconducting properties as the substrate temperature increasing. The MgB2 thin films prepared at substrate temperature of 853K appear to have a excellent superconductivity which shows Tc （oneset）= 39.85K, △T= 0.32K.
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