中文摘要：

利用直流电弧放电合成非晶碳氧化硅（SiCO）纳米线，不使用催化剂和模板，独立的SiCO纳米线沉积在石墨锅的表面．通过XRD、SEM、TEM、XPS、FTIR等对SiCO纳米线进行了表征．结果表明，纳米线长度为20~100μm，直径为10~100nm，Si原子同C原子和氧原子分享成键组成SiCO单元．SiCO纳米线的光致发光谱在454和540nm呈现了强而稳定的白色发光峰．SiCO纳米线的生长机制为等离子辅助气一固生长机制．

英文摘要：

Synthesis of amorphous SiCO nanowires was carried out by means of direct current are discharge. Free-standing SiCO nanowires were deposited on the surface of a graphite crucible without any catalyst and template. The SiCO nanowires were analyzed by XRD, SEM, TEM, XPS, and FTIR. The SiCO nanowires were typically 20-100 gm in length and 10-100 nm in diameter as measured by SEM and TEM. The XPS and FTIR spectroscopy analysis confirmed that the Si atoms share bonds with O and C atoms in mixed SiCO units. The PL spectrum of the SiCO nanowires showed strong and stable white emissions at 454 and 540 nm. A plasma-assisted vapor-solid growth mechanism is proposed to be responsible for the formation of the SiCO nanowires.