中文摘要：

利用TCAD半导体器件仿真软件对具有T型发射区结构的单晶硅太阳电池进行了仿真研究。全面系统地分析了在不同衬底少子寿命情况下,不同T型发射区深度对太阳电池外量子效率、短路电流密度、开路电压、填充因子及转换效率的影响。仿真结果表明：采用T型发射区结构可在一定程度上提高常规均匀发射区太阳电池的电学性能;T型发射区结构对700～1200nm长波段入射光的外量子效率具有明显的改善作用;当衬底少子寿命一定时,太阳电池短路电流密度、填充因子均随T型发射区深度的增大而增大,而开路电压随T型发射区深度的增大而减小;当T型发射区深度大于80μm时,对于低衬底少子寿命的单晶硅太阳电池,T型发射区结构对其转换效率的改善效果最为显著。

英文摘要：

The simulation study of mono-crystalline silicon solar cells with the T-type emitter structure was carried out by using the TCAD semiconductor device simulation software. The influences of the T-type emitter＇s depth on the external quantum efficiency,short circuit current density,open-circuit voltage,fill factor and conversion efficiency of the solar cells under different substrate minority carrier lifetimes were analyzed comprehensively and systematically.The simulation results show that the electrical properties of a conventional solar cell using uniform emitter can be improved to a certain extent by using the T-type emitter structure,and the T-type emitter structure can significantly improve the external quantum efficiency of the long wave incident light of 700 ~ 1200 nm. When the substrate minority carrier has a certain lifetime,the short circuit current density and the fill factor of a solar cell increase with the increase of T-type emitter structure＇s depth,while the open circuit voltage decreases with the increase of T-type emitter structure＇s depth. When the depth of the T-type emitter structure is greater than 80μm,the T-type emitter structure can improve the conversion efficiency of the mono-crystalline silicon solar cell with the lower substrate minority carrier lifetime most significantly.