中文摘要：

利用有限差分法求解半导体器件基本方程，研究了表面悬键、杂质和缺陷对晶硅电池输出参数的影响。研究表明：当晶硅电池无体内缺陷和表面缺陷或当仅存在表面悬键、杂质和缺陷，且三者起施主型和受主型陷阱作用时，正向偏压下的晶硅电池暗I-V特性曲线与理想二极管I-V特性曲线相同，但当正向偏压大于PN开启电压0.59V，晶硅电池暗I-V特性曲线将偏离理想二极管I-V特性曲线，且偏离程度随表面悬键、杂质和缺陷浓度的增加而增大；当表面悬键、杂质和缺陷起复合中心作用时，晶硅电池暗I-V特性曲线将偏离理想二极管I-V特性曲线；就对暗I-V特性曲线的影响而言，复合中心最大，施主型次之，受主型最小。

英文摘要：

The influences of surface dangling bonds, impurities and defects on the output parameters of crystalline silicon solar cell were discussed by solving semiconductor device equations by finite difference method. The results show that the dark I-V characteristic curves of the crystal silicon cell without bulk defects and surface defects or only with donor-like or acceptor-like surface dangling bonds, impurities and defects, are the same as those of the ideal diodes under the forward bias voltage conditions. When the forward bias voltage is greater than 0.59 V, which is the turn-on voltage ofPN junction, these dark I-V characteristic curves deviate from those ideal diode I-V characteristic curves, and the degree ofdeviation increases with the increase of the concentrations of the surface dangling bonds, impurities and defects. When the functions of surface dangling bonds, impurities and defects are as the recombination centers, the dark I-V characteristic curves of crystalline silicon cells deviate from the ideal diode I-V characteristic curves; the influences on the dark I-V characteristic curves decreases in order of the recombination-center-like, donor-like and acceptor-like.