中文摘要：

基于非等温能量平衡传输模型，利用TCAD半导体器件仿真软件对N型插指背接触（IBC）单晶硅太阳电池反向输出特性进行了仿真研究。通过光电转换效率和反向热击穿特性对IBC太阳电池的性能进行综合评价。全面系统地分析了不同衬底电阻率、发射区表面浓度、发射结结深对IBC电池反向热击穿特性和转换效率的影响。借鉴双极功率半导体器件的抗二次击穿技术并应用于IBC电池，详细分析了发射区边缘刻蚀结构对IBC电池反向热击穿特性的影响。仿真结果表明：高晶硅衬底电阻率、低发射区表面浓度有利于改善IBC电池的反向热击穿特性，但不利于电池转换效率的提高。深结发射区不仅有利于改善IBC电池的热击穿特性，而且有利于电池转换效率的提高。当发射区边缘柱面结未被完全刻蚀时，不具有改善IBC电池反向热击穿特性的作用。当发射区边缘柱面结被完全刻蚀时，随着横向刻蚀距离的增大，热击穿临界电压增大。

英文摘要：

Based on the non-isothermal energy balance transfer model, a simulation study of the reverse out characteris- tics of n-type interdigitated back contact （ IBC ） monocrystalline silicon solar cells was conducted by using the TCAD semiconductor devices simulation software. The performance of IBC solar cells was synthetically evaluated by using the photoelectric conversion efficiency and reverse thermal breakdown characteristic. The influences of the substrate resistivity, emitter surface concentration and emitter junction depth on IBC solar cells＇ reverse thermal breakdown characteristic and conversion efficiency were studied in detail. The influence of the edge etching struc- ture of the emitter on the characteristics of reverse thermal breakdown of IBC solar cells was analyzed in detail by drawing on the technique of resisting secondary breakdown for bipolar power semiconductor devices and by applying this technique to IBC solar cells. The simulation results show that high crystalline silicon resistivity and low emitter surface concentration help to improve IBC solar cells＇ reverse thermal breakdown characteristics, but can not help to improve the cell conversion efficiency; The deeper emitter junction is beneficial to improving the thermal break- down characteristic of IBC cells, as well as the solar cell conversion efficiency; When the emitter edge cylinder junction down ch is incompletely etched, emitter edge＇s etching structure can not improve IBC solar cells＇ thermal break- aracteristic; When the emitter edge cylinder junction is completely etched, the thermal breakdown thresh- old voltage increases with the increase of lateral etching distance.